PCDB0465G1_T0_00001
Panjit International Inc.
Panjit International Inc.
650V SIC SCHOTTKY BARRIER DIODE
$2.60
Available to order
Reference Price (USD)
1+
$2.60000
500+
$2.574
1000+
$2.548
1500+
$2.522
2000+
$2.496
2500+
$2.47
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-quality PCDB0465G1_T0_00001 Single Rectifier Diodes from Panjit International Inc., designed for efficient power conversion and reliable performance. These diodes are ideal for a wide range of applications, including power supplies, converters, and inverters. With robust construction and superior thermal management, they ensure long-lasting operation under demanding conditions. Features include low forward voltage drop, high surge current capability, and excellent reverse leakage characteristics. Whether for industrial or consumer electronics, Panjit International Inc.'s PCDB0465G1_T0_00001 delivers unmatched reliability. Contact us today for more details and to request a quote!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 4A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 40 µA @ 650 V
- Capacitance @ Vr, F: 146pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Diotec Semiconductor
P600M-CT
onsemi
1N459A
Comchip Technology
CDST-4448-G
Power Integrations
LQA30T300
Vishay General Semiconductor - Diodes Division
U3D-E3/57T
Vishay General Semiconductor - Diodes Division
VS-8TQ080STRR-M3
Vishay General Semiconductor - Diodes Division
BYS12-90-E3/TR
Vishay General Semiconductor - Diodes Division
GL34D-E3/83
Microchip Technology
CDLL0.2A30
Central Semiconductor Corp