PDTA115TMB,315
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA PDTA115TMB - SMALL
$0.02
Available to order
Reference Price (USD)
10,000+
$0.04590
Exquisite packaging
Discount
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The PDTA115TMB,315 from NXP USA Inc. is a premium selection in the Discrete Semiconductor Products market. Specifically designed as Transistors - Bipolar (BJT) - Single, Pre-Biased, these components provide exceptional reliability and efficiency. Features include fast switching speeds, high voltage tolerance, and compact design. They are perfect for applications in telecommunications, medical devices, and renewable energy systems. Choose NXP USA Inc. for cutting-edge semiconductor technology. Get in touch for pricing and availability details!
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 100 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 180 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: DFN1006B-3
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