PDTA123YE,115
NXP USA Inc.
NXP USA Inc.
TRANS PREBIAS PNP 150MW SC75
$0.02
Available to order
Reference Price (USD)
1+
$0.02000
500+
$0.0198
1000+
$0.0196
1500+
$0.0194
2000+
$0.0192
2500+
$0.019
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PDTA123YE,115 by NXP USA Inc. is a premier choice in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for precision and efficiency, featuring high gain bandwidth, low distortion, and excellent thermal management. Perfect for RF applications, sensor interfaces, and control systems. NXP USA Inc. stands for quality and innovation. Reach out to us for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75
Related Products
Rohm Semiconductor
DTA113ZEFRATL
onsemi
MUN2114T1
Diodes Incorporated
DDTA125TUA-7-F
onsemi
SMUN5214T1G
onsemi
NSVMMUN2232LT3G
Rohm Semiconductor
DTC144TKAT146
Rohm Semiconductor
DTD143EKT146
Nexperia USA Inc.
PDTB143EQAZ
Panasonic Electronic Components
UNR31A400L
Toshiba Semiconductor and Storage