PDTA143EMB,315
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA PDTA143EMB - SMALL
$0.02
Available to order
Reference Price (USD)
10,000+
$0.04590
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your designs with PDTA143EMB,315 by NXP USA Inc., a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, PDTA143EMB,315 is the perfect fit. Contact us today to learn more and place your order with NXP USA Inc..
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Power - Max: 250 mW
- Frequency - Transition: 180MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: DFN1006B-3
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