PDTB123EU135
NXP USA Inc.
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
$0.03
Available to order
Reference Price (USD)
1+
$0.03000
500+
$0.0297
1000+
$0.0294
1500+
$0.0291
2000+
$0.0288
2500+
$0.0285
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose PDTB123EU135 by NXP USA Inc. for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, PDTB123EU135 is a versatile solution. Ready to order? Submit your inquiry today and let NXP USA Inc. provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Microchip Technology
JANTX2N3637UB/TR
Rohm Semiconductor
2SC4081T106Q
onsemi
2SA1179N6-TB-E
onsemi
BC856ALT1G
Diodes Incorporated
FCX619QTA
Microchip Technology
JAN2N3501
Panjit International Inc.
BC847C-AU_R1_000A1
Central Semiconductor Corp
CMNT3904E TR PBFREE
Microchip Technology
JANS2N3498L
Rohm Semiconductor