PDTB143EUF
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA PDTB143EUF - SMALL
$0.03
Available to order
Reference Price (USD)
10,000+
$0.04420
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the PDTB143EUF from NXP USA Inc. for your Discrete Semiconductor Products needs. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for reliability and high performance, with features such as high current handling, low saturation, and excellent stability. Ideal for applications in medical equipment, security systems, and energy management. NXP USA Inc. is your trusted partner for quality semiconductors. Inquire now for details and pricing!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 140 MHz
- Power - Max: 300 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
Related Products
Diodes Incorporated
DDTA144ECA-7
Toshiba Semiconductor and Storage
RN1112,LXHF(CT
Rohm Semiconductor
DTC144EETL
Toshiba Semiconductor and Storage
RN1110,LXHF(CT
Rohm Semiconductor
DTA043ZEBTL
Rohm Semiconductor
DTA114TU3T106
Diodes Incorporated
DDTA124TCA-7
Diodes Incorporated
DDTC115TE-7-F
Rohm Semiconductor
DTC123EMFHAT2L
onsemi