PDTC114EMB,315
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS NPN 50V DFN1006B-3
$0.04
Available to order
Reference Price (USD)
10,000+
$0.04590
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PDTC114EMB,315 by Nexperia USA Inc. is a premier choice in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for precision and efficiency, featuring high gain bandwidth, low distortion, and excellent thermal management. Perfect for RF applications, sensor interfaces, and control systems. Nexperia USA Inc. stands for quality and innovation. Reach out to us for expert advice and competitive pricing!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: 3-XFDFN
- Supplier Device Package: DFN1006B-3
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