Shopping cart

Subtotal: $0.00

PDTC123ETVL

Nexperia USA Inc.
PDTC123ETVL Preview
Nexperia USA Inc.
PDTC123ET/SOT23/TO-236AB
$0.02
Available to order
Reference Price (USD)
10,000+
$0.02360
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): -
  • Resistor - Base (R1): 2.2 kOhms
  • Resistor - Emitter Base (R2): 2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB

Related Products

Toshiba Semiconductor and Storage

RN1417(TE85L,F)

Rohm Semiconductor

DTA113ZETL

Rohm Semiconductor

DTA115TKAT146

Toshiba Semiconductor and Storage

RN1108,LXHF(CT

Nexperia USA Inc.

PDTD123YUF

Nexperia USA Inc.

PDTC114YQB-QZ

Nexperia USA Inc.

PDTB114ETVL

Rohm Semiconductor

DTA114ECAHZGT116

Nexperia USA Inc.

NHDTC144ETVL

Top