PDTC123TT,215
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA PDTC123TT - SMALL S
$0.02
Available to order
Reference Price (USD)
3,000+
$0.03304
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PDTC123TT,215 by NXP USA Inc. is a high-performance solution in the Discrete Semiconductor Products sector. These Transistors - Bipolar (BJT) - Single, Pre-Biased are crafted for excellence, featuring high efficiency, low thermal resistance, and long lifespan. Perfect for use in power converters, lighting systems, and communication devices. NXP USA Inc. guarantees superior products and support. Get in touch today to explore our offerings!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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