PDTD123YT,215
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS NPN 250MW TO236AB
$0.34
Available to order
Reference Price (USD)
3,000+
$0.07625
6,000+
$0.06728
15,000+
$0.05831
30,000+
$0.05532
75,000+
$0.05233
150,000+
$0.04934
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the PDTD123YT,215 from Nexperia USA Inc. for your Discrete Semiconductor Products needs. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for reliability and high performance, with features such as high current handling, low saturation, and excellent stability. Ideal for applications in medical equipment, security systems, and energy management. Nexperia USA Inc. is your trusted partner for quality semiconductors. Inquire now for details and pricing!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
Related Products
Toshiba Semiconductor and Storage
RN2301,LXHF
Nexperia USA Inc.
PDTC124EQCZ
Panasonic Electronic Components
UNRF1A300A
Diodes Incorporated
DDTC144VUA-7
Rohm Semiconductor
DTA123JKAT146
Infineon Technologies
BCR196E6327
Diodes Incorporated
DDTA124EUA-7-F
Diodes Incorporated
DDTA115TUA-7-F
Toshiba Semiconductor and Storage
RN2309(TE85L,F)
Rohm Semiconductor