PEMD17,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP SOT666
$0.04
Available to order
Reference Price (USD)
4,000+
$0.06831
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-quality PEMD17,115 Bipolar Junction Transistor (BJT) Arrays from Nexperia USA Inc., designed for reliable performance in various electronic applications. These pre-biased transistor arrays offer excellent switching and amplification capabilities, making them ideal for compact circuit designs. Common applications include signal processing, driver circuits, and load switching in consumer electronics, industrial controls, and automotive systems. Features include matched pairs for consistent performance, low saturation voltage, and thermal stability. Upgrade your electronic projects with Nexperia USA Inc.'s precision-engineered components. Contact us today for pricing and availability submit your inquiry now!
Specifications
- Product Status: Obsolete
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
Related Products
onsemi
NSM11156DW6T1G
Toshiba Semiconductor and Storage
RN2902FE,LF(CT
Toshiba Semiconductor and Storage
RN2911,LXHF(CT
Nexperia USA Inc.
PUMD6,115
Rohm Semiconductor
UMB2NTN
Nexperia USA Inc.
PEMD3,115
Infineon Technologies
BCR183SH6433XTMA1
onsemi
SMUN5314DW1T1G
Toshiba Semiconductor and Storage
RN1502(TE85L,F)
Diodes Incorporated