PEMH11,115
Nexperia USA Inc.

Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V SOT666
$0.44
Available to order
Reference Price (USD)
1+
$0.38000
10+
$0.31100
100+
$0.16500
500+
$0.10852
1,000+
$0.07380
Exquisite packaging
Discount
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Discover high-quality PEMH11,115 Bipolar Junction Transistor (BJT) Arrays from Nexperia USA Inc., designed for reliable performance in various electronic applications. These pre-biased transistor arrays offer excellent switching and amplification capabilities, making them ideal for compact circuit designs. Common applications include signal processing, driver circuits, and load switching in consumer electronics, industrial controls, and automotive systems. Features include matched pairs for consistent performance, low saturation voltage, and thermal stability. Upgrade your electronic projects with Nexperia USA Inc.'s precision-engineered components. Contact us today for pricing and availability submit your inquiry now!
Specifications
- Product Status: Not For New Designs
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666