PEMH19,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V SOT666
$0.08
Available to order
Reference Price (USD)
1+
$0.08268
500+
$0.0818532
1000+
$0.0810264
1500+
$0.0801996
2000+
$0.0793728
2500+
$0.078546
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Select Nexperia USA Inc.'s PEMH19,115 for superior Pre-Biased Transistor Array performance in demanding electronic environments. These BJT arrays deliver time-saving solutions with their integrated resistor networks and matched transistor characteristics. Ideal for audio amplifiers, level shifters, and digital logic interfaces in commercial and industrial equipment. Performance highlights include wide operating voltage ranges, excellent linearity, and resistance to thermal runaway. As a trusted semiconductor supplier, Nexperia USA Inc. offers flexible packaging options and reliable delivery schedules. Whether you need samples or production quantities, begin by submitting your PEMH19,115 inquiry our team awaits your requirements!
Specifications
- Product Status: Not For New Designs
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
Related Products
Nexperia USA Inc.
PEMH13,115
Infineon Technologies
BCR141SH6327XTSA1
Diodes Incorporated
DDA144EUQ-7-F
onsemi
NSVMUN5312DW1T3G
Diodes Incorporated
DDA114TU-7
Rohm Semiconductor
IMB2AT110
Diodes Incorporated
DDC114YH-7
onsemi
NSBA144EDP6T5G
Diodes Incorporated
DDA123JU-7
Nexperia USA Inc.