PESD2ETH1GXT-QR
Nexperia USA Inc.
Nexperia USA Inc.
PESD2ETH1GXT-Q/SOT23/TO-236AB
$0.55
Available to order
Reference Price (USD)
1+
$0.55000
500+
$0.5445
1000+
$0.539
1500+
$0.5335
2000+
$0.528
2500+
$0.5225
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-quality PESD2ETH1GXT-QR TVS Diodes from Nexperia USA Inc., designed to protect your circuits from voltage spikes and transients. These diodes are essential for safeguarding sensitive electronic components, ensuring reliable performance in various applications. With robust construction and superior clamping capabilities, Nexperia USA Inc.'s TVS Diodes are ideal for automotive, industrial, and consumer electronics. Features include fast response time, low leakage current, and high surge capability. Protect your devices today contact us for a quote or more information!
Specifications
- Product Status: Active
- Type: Steering (Rail to Rail)
- Unidirectional Channels: 2
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 24V (Max)
- Voltage - Breakdown (Min): -
- Voltage - Clamping (Max) @ Ipp: -
- Current - Peak Pulse (10/1000µs): 2.3A (8/20µs)
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 7.7pF @ 1MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
Related Products
Taiwan Semiconductor Corporation
SMF26A RVG
Semtech Corporation
SDC36C.TCT
Panjit International Inc.
P4SMA47AS_R1_00001
Vishay General Semiconductor - Diodes Division
P6KE130CAHE3/73
Diotec Semiconductor
SDA4AK
Microchip Technology
MART100KP85CA
Microchip Technology
JANTXV1N6115AUS
Comchip Technology
TV02W260B-G
Diodes Incorporated
SMBJ22A-13-F
Taiwan Semiconductor Corporation