PHE13003A,412
NXP USA Inc.
NXP USA Inc.
NOW WEEN - PHE13003A - POWER BIP
$0.07
Available to order
Reference Price (USD)
10,000+
$0.06888
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Elevate your electronic projects with PHE13003A,412 from NXP USA Inc., a top-tier supplier of Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single offer fast response times and high durability, making them ideal for high-frequency applications. Whether for telecommunications or computing, PHE13003A,412 delivers. Contact us now to explore how NXP USA Inc. can meet your needs.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 750mA
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 400mA, 5V
- Power - Max: 2.1 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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