PHE13009/DG,127
NXP USA Inc.
NXP USA Inc.
NOW WEEN - PHE13009 - POWER BIPO
$0.33
Available to order
Reference Price (USD)
1+
$0.82000
10+
$0.71700
100+
$0.54990
500+
$0.43470
1,000+
$0.34776
Exquisite packaging
Discount
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Choose PHE13009/DG,127 by NXP USA Inc. for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, PHE13009/DG,127 is a versatile solution. Ready to order? Submit your inquiry today and let NXP USA Inc. provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 1.6A, 8A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
- Power - Max: 80 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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