PJA3412-AU_R2_000A1
Panjit International Inc.
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M
$0.42
Available to order
Reference Price (USD)
1+
$0.42000
500+
$0.4158
1000+
$0.4116
1500+
$0.4074
2000+
$0.4032
2500+
$0.399
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with PJA3412-AU_R2_000A1, a high-quality Transistors - FETs, MOSFETs - Single from Panjit International Inc.. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, PJA3412-AU_R2_000A1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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