PJD35N06A-AU_L2_000A1
Panjit International Inc.
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
$0.86
Available to order
Reference Price (USD)
1+
$0.86000
500+
$0.8514
1000+
$0.8428
1500+
$0.8342
2000+
$0.8256
2500+
$0.817
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of PJD35N06A-AU_L2_000A1, a premium Transistors - FETs, MOSFETs - Single from Panjit International Inc.. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, PJD35N06A-AU_L2_000A1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta), 75W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
SI7852ADP-T1-E3
onsemi
FDMC007N08LCDC
Renesas Electronics America Inc
RJK1054DPB-00#J5
Infineon Technologies
IRFP150MPBF
Vishay Siliconix
IRF820STRRPBF
onsemi
MTA15N06
onsemi
NTMFS6H848NT1G
Renesas Electronics America Inc
RJK0328DPB-01#J0
Rohm Semiconductor
R6047KNZ4C13
Texas Instruments