PJMP900N60EC_T0_00001
Panjit International Inc.
Panjit International Inc.
600V SUPER JUNCITON MOSFET
$2.19
Available to order
Reference Price (USD)
1+
$2.19000
500+
$2.1681
1000+
$2.1462
1500+
$2.1243
2000+
$2.1024
2500+
$2.0805
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose PJMP900N60EC_T0_00001 by Panjit International Inc.. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with PJMP900N60EC_T0_00001 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 47.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB-L
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IRF7406TRPBF
Toshiba Semiconductor and Storage
TK40S06N1L,LQ
Infineon Technologies
IRFS7534TRL7PP
Fairchild Semiconductor
FDD6680S
Texas Instruments
TPIC5424LDW
onsemi
NTMFS6D1N08HT1G
Vishay Siliconix
SIHA21N80AEF-GE3
Toshiba Semiconductor and Storage
TK46A08N1,S4X
Vishay Siliconix
IRFP140PBF
Central Semiconductor Corp