PJQ5427_R2_00001
Panjit International Inc.
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
$1.43
Available to order
Reference Price (USD)
1+
$1.43000
500+
$1.4157
1000+
$1.4014
1500+
$1.3871
2000+
$1.3728
2500+
$1.3585
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Panjit International Inc. presents PJQ5427_R2_00001, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, PJQ5427_R2_00001 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8593 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 63W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN5060-8
- Package / Case: 8-PowerVDFN
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