PJS6421-AU_S1_000A1
Panjit International Inc.
Panjit International Inc.
20V P-CHANNEL ENHANCEMENT MODE M
$0.43
Available to order
Reference Price (USD)
1+
$0.43000
500+
$0.4257
1000+
$0.4214
1500+
$0.4171
2000+
$0.4128
2500+
$0.4085
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with PJS6421-AU_S1_000A1, a premium Transistors - FETs, MOSFETs - Single from Panjit International Inc.. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust PJS6421-AU_S1_000A1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-6
- Package / Case: SOT-23-6
Related Products
Infineon Technologies
BUZ73AHXKSA1
Transphorm
TP65H070LSG-TR
Infineon Technologies
SPA07N60C3XKSA1
IXYS
IXFP4N100P
Infineon Technologies
IMZ120R350M1HXKSA1
Microchip Technology
VN2460N3-G-P003
Infineon Technologies
IPL65R099C7AUMA1
Infineon Technologies
IPLK80R1K4P7ATMA1
Taiwan Semiconductor Corporation
TSM2323CX RFG
Fairchild Semiconductor