PJS6601_S2_00001
Panjit International Inc.
Panjit International Inc.
20V COMPLEMENTARY ENHANCEMENT MO
$0.56
Available to order
Reference Price (USD)
1+
$0.56000
500+
$0.5544
1000+
$0.5488
1500+
$0.5432
2000+
$0.5376
2500+
$0.532
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PJS6601_S2_00001 from Panjit International Inc. is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, PJS6601_S2_00001 delivers consistent quality. Contact us now to learn more and secure your supply of Panjit International Inc. s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta)
- Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A, 4.5V, 100mOhm @ 3.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V
- Power - Max: 1.25W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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