PMBF4392,215
NXP USA Inc.
NXP USA Inc.
JFET N-CH 40V 250MW SOT23
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Engineers trust NXP USA Inc.'s PMBF4392,215 JFET transistors for critical amplification stages requiring exceptional dynamic range. The proprietary fabrication process delivers tight IDSS matching between units, simplifying parallel configurations in mixer consoles and transducer interfaces. With TO-92 and SMD packaging options available, these components adapt to space-constrained PCB layouts. Visit our product page for application notes or contact sales to discuss volume discounts on these industry-standard semiconductors.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): 40 V
- Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
- Resistance - RDS(On): -
- Power - Max: 250 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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