PMBFJ109,215
NXP USA Inc.
NXP USA Inc.
JFET N-CH 25V 250MW SOT23
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NXP USA Inc.'s PMBFJ109,215 JFET transistors redefine reliability in Discrete Semiconductor Products, offering unmatched linearity for demanding industrial applications. Engineered with rugged construction and ESD protection, these components excel in harsh environments while maintaining low distortion. Typical applications include military communications, automotive systems, and test equipment where signal fidelity is critical. Request free samples or discuss your design needs our experts will guide you through NXP USA Inc.'s extensive JFET portfolio.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): 25 V
- Current - Drain (Idss) @ Vds (Vgs=0): 40 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 6 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
- Resistance - RDS(On): 12 Ohms
- Power - Max: 250 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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