PMBFJ309,215
NXP USA Inc.
NXP USA Inc.
JFET N-CH 25V 250MW SOT23
$0.00
Available to order
Reference Price (USD)
3,000+
$0.15466
6,000+
$0.14652
15,000+
$0.13838
30,000+
$0.13431
Exquisite packaging
Discount
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Discover high-performance PMBFJ309,215 JFET transistors from NXP USA Inc., designed for precision signal processing and low-noise applications. These transistors feature excellent gain consistency, low input capacitance, and superior thermal stability, making them ideal for audio amplifiers, instrumentation circuits, and RF designs. Whether you're developing professional audio equipment or sensitive measurement devices, NXP USA Inc.'s JFETs deliver reliable performance. Contact us today for datasheets and pricing our team is ready to assist with your project requirements.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): 25 V
- Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
- Resistance - RDS(On): 50 Ohms
- Power - Max: 250 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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