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PMDT290UNE,115

Nexperia USA Inc.
PMDT290UNE,115 Preview
Nexperia USA Inc.
MOSFET 2N-CH 20V 0.8A SOT666
$0.51
Available to order
Reference Price (USD)
4,000+
$0.12415
8,000+
$0.11662
12,000+
$0.10910
28,000+
$0.10007
100,000+
$0.09576
Exquisite packaging
Discount
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Specifications

  • Product Status: Not For New Designs
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666

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