PMGD130UN,115
NXP USA Inc.
NXP USA Inc.
MOSFET 2N-CH 20V 1.2A 6TSSOP
$0.09
Available to order
Reference Price (USD)
1+
$0.09000
500+
$0.0891
1000+
$0.0882
1500+
$0.0873
2000+
$0.0864
2500+
$0.0855
Exquisite packaging
Discount
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The PMGD130UN,115 by NXP USA Inc. is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let NXP USA Inc. s PMGD130UN,115 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.2A
- Rds On (Max) @ Id, Vgs: 145mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
- Power - Max: 390mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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