PMN120ENEAX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 2.5A 6TSOP
$0.39
Available to order
Reference Price (USD)
1+
$0.39000
500+
$0.3861
1000+
$0.3822
1500+
$0.3783
2000+
$0.3744
2500+
$0.3705
Exquisite packaging
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Discover PMN120ENEAX, a versatile Transistors - FETs, MOSFETs - Single solution from Nexperia USA Inc., a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 123mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 670mW (Ta), 7.5W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
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