PMN30UNX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 4.5A 6TSOP
$0.42
Available to order
Reference Price (USD)
3,000+
$0.13431
6,000+
$0.12617
15,000+
$0.11803
30,000+
$0.10826
75,000+
$0.10419
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover PMN30UNX, a versatile Transistors - FETs, MOSFETs - Single solution from Nexperia USA Inc., a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
Related Products
onsemi
MMSF7N03HDR2
Panjit International Inc.
PJQ5461A_R2_00001
onsemi
FDMS0312AS
Panjit International Inc.
PJMF120N60EC_T0_00001
onsemi
NTPF110N65S3HF
Vishay Siliconix
IRF530PBF-BE3
Vishay Siliconix
SQJ168ELP-T1_GE3
Infineon Technologies
IPP80N08S406AKSA1
IXYS
IXFK90N65X3
Diodes Incorporated