PMPB10ENZ
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 10A DFN2020MD-6
$0.15
Available to order
Reference Price (USD)
1+
$0.15345
500+
$0.1519155
1000+
$0.150381
1500+
$0.1488465
2000+
$0.147312
2500+
$0.1457775
Exquisite packaging
Discount
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Boost your electronic applications with PMPB10ENZ, a reliable Transistors - FETs, MOSFETs - Single by Nexperia USA Inc.. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, PMPB10ENZ meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 12.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020MD-6
- Package / Case: 6-UDFN Exposed Pad
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