PMPB27EP,115
Nexperia USA Inc.
Nexperia USA Inc.
30 V, SINGLE P-CHANNEL TRENCH MO
$0.11
Available to order
Reference Price (USD)
3,000+
$0.17553
6,000+
$0.16618
15,000+
$0.15683
30,000+
$0.14561
75,000+
$0.14093
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of PMPB27EP,115, a premium Transistors - FETs, MOSFETs - Single from Nexperia USA Inc.. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, PMPB27EP,115 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 29mOhm @ 6.1A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020MD-6
- Package / Case: 6-UDFN Exposed Pad
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