PMPB29XNE,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 5A DFN2020MD-6
$0.14
Available to order
Reference Price (USD)
3,000+
$0.17553
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance PMPB29XNE,115 from Nexperia USA Inc., a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, PMPB29XNE,115 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020MD-6
- Package / Case: 6-UDFN Exposed Pad
Related Products
Fairchild Semiconductor
IRFS820B
Renesas Electronics America Inc
RJK60S7DPP-E0#T2
onsemi
NTD4865NT4G
Toshiba Semiconductor and Storage
SSM3J143TU,LF
Diodes Incorporated
DMP10H4D2S-7
Infineon Technologies
IPL60R065P7AUMA1
Nexperia USA Inc.
PSMN1R4-40YLD,115-NEX
Micro Commercial Co
MCAC25P10YHE3-TP
IXYS
IXTA48P05T
Infineon Technologies