PMST5550,135
NXP Semiconductors
NXP Semiconductors
NEXPERIA PMST5550 - SMALL SIGNAL
$0.03
Available to order
Reference Price (USD)
10,000+
$0.03400
Exquisite packaging
Discount
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Choose PMST5550,135 by NXP Semiconductors for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, PMST5550,135 is a versatile solution. Ready to order? Submit your inquiry today and let NXP Semiconductors provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 140 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
- Power - Max: 200 mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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