PMV20ENR
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 6A TO236AB
$0.39
Available to order
Reference Price (USD)
3,000+
$0.13402
6,000+
$0.12688
15,000+
$0.11974
30,000+
$0.11117
75,000+
$0.10760
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with PMV20ENR, a premium Transistors - FETs, MOSFETs - Single from Nexperia USA Inc.. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust PMV20ENR for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 510mW (Ta), 6.94W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Infineon Technologies
IPS60R210PFD7SAKMA1
Infineon Technologies
IPD25N06S4L30ATMA2
STMicroelectronics
STL100N10F7
Nexperia USA Inc.
BUK7Y2R0-40HX
Vishay Siliconix
IRLIZ34GPBF
Torex Semiconductor Ltd
XP234N0801TR-G
Toshiba Semiconductor and Storage
TK46E08N1,S1X
Vishay Siliconix
SQA401EEJ-T1_GE3
onsemi
FCP7N60
Fairchild Semiconductor