PMV65XPEAR
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
$0.47
Available to order
Reference Price (USD)
3,000+
$0.10241
6,000+
$0.09321
15,000+
$0.08402
30,000+
$0.07942
75,000+
$0.07160
150,000+
$0.06930
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with PMV65XPEAR, a reliable Transistors - FETs, MOSFETs - Single by Nexperia USA Inc.. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, PMV65XPEAR meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 78mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id: 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 618 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 480mW (Ta), 6.25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
IXYS
IXFA18N65X2
Infineon Technologies
IPBE65R099CFD7AATMA1
Diodes Incorporated
DMP2037U-13
Infineon Technologies
BTS247ZE3062ANTMA1
STMicroelectronics
STP200N3LL
Fairchild Semiconductor
HUFA75343P3
Rectron USA
RM2301E
Microchip Technology
APT20M18B2VFRG
Vishay Siliconix
SQJ476EP-T1_GE3
IXYS