PMV90ENER
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CHANNEL 30V 3A TO236AB
$0.46
Available to order
Reference Price (USD)
3,000+
$0.08330
6,000+
$0.07582
15,000+
$0.06834
30,000+
$0.06460
75,000+
$0.05824
150,000+
$0.05637
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance PMV90ENER from Nexperia USA Inc., a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, PMV90ENER delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 460mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Infineon Technologies
IPD50N03S207ATMA1
IXYS
IXFH94N30P3
Vishay Siliconix
IRF830SPBF
Infineon Technologies
IRFR120ZTRPBF
Taiwan Semiconductor Corporation
TSM60NB150CF C0G
onsemi
NTR5105PT1G
Infineon Technologies
IRF2804PBF
Fairchild Semiconductor
FQP17N08L
Vishay Siliconix
SI3460BDV-T1-BE3
Alpha & Omega Semiconductor Inc.