PMZB200UNEYL
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 1.4A DFN1006B-3
$0.45
Available to order
Reference Price (USD)
10,000+
$0.07286
30,000+
$0.06831
50,000+
$0.06057
100,000+
$0.05920
Exquisite packaging
Discount
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Enhance your circuit performance with PMZB200UNEYL, a premium Transistors - FETs, MOSFETs - Single from Nexperia USA Inc.. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust PMZB200UNEYL for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006B-3
- Package / Case: 3-XFDFN
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