PQMB11Z
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 2PNP DFN1010B-6
$0.35
Available to order
Reference Price (USD)
5,000+
$0.06188
10,000+
$0.05363
25,000+
$0.05088
50,000+
$0.04813
125,000+
$0.04538
Exquisite packaging
Discount
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Select Nexperia USA Inc.'s PQMB11Z for superior Pre-Biased Transistor Array performance in demanding electronic environments. These BJT arrays deliver time-saving solutions with their integrated resistor networks and matched transistor characteristics. Ideal for audio amplifiers, level shifters, and digital logic interfaces in commercial and industrial equipment. Performance highlights include wide operating voltage ranges, excellent linearity, and resistance to thermal runaway. As a trusted semiconductor supplier, Nexperia USA Inc. offers flexible packaging options and reliable delivery schedules. Whether you need samples or production quantities, begin by submitting your PQMB11Z inquiry our team awaits your requirements!
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 180MHz
- Power - Max: 230mW
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1010B-6
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