PRMB11Z
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 2PNP 50V DFN1412-6
$0.37
Available to order
Reference Price (USD)
5,000+
$0.05635
10,000+
$0.04876
25,000+
$0.04623
50,000+
$0.04370
125,000+
$0.03864
Exquisite packaging
Discount
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Introducing Nexperia USA Inc.'s PRMB11Z advanced Pre-Biased Transistor Arrays engineered for modern electronics. These BJT arrays provide ready-to-use solutions with internal resistor networks, significantly reducing design complexity and BOM costs. Application highlights include power supply circuits, display drivers, and microcontroller interfaces in automotive, aerospace, and industrial environments. Technical features comprise low VCE(sat), tight current gain matching, and RoHS compliance for environmental safety. Nexperia USA Inc. stands behind every PRMB11Z unit with rigorous quality testing. Streamline your procurement process contact our sales team via the inquiry form for personalized assistance!
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 180MHz
- Power - Max: 480mW
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1412-6
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