PSMN040-100MSEX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 100V 30A LFPAK33
$1.00
Available to order
Reference Price (USD)
1,500+
$0.42081
3,000+
$0.38136
7,500+
$0.35506
10,500+
$0.34191
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
PSMN040-100MSEX by Nexperia USA Inc. is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, PSMN040-100MSEX ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 36.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 91W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK33
- Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Related Products
Infineon Technologies
IAUA180N10S5N029AUMA1
Microchip Technology
TN2435N8-G
onsemi
FQA90N15
Diodes Incorporated
DMPH2040UVTQ-7
IXYS
IXFK64N50P
Vishay Siliconix
IRFR110TRPBF
Alpha & Omega Semiconductor Inc.
AOT8N50
Toshiba Semiconductor and Storage
TK10V60W,LVQ
Diodes Incorporated
DMN2300UFB4-7B
Infineon Technologies