PSMN1R9-40YSDX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 40V 200A LFPAK56
$1.97
Available to order
Reference Price (USD)
1+
$1.97000
500+
$1.9503
1000+
$1.9306
1500+
$1.9109
2000+
$1.8912
2500+
$1.8715
Exquisite packaging
Discount
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Boost your electronic applications with PSMN1R9-40YSDX, a reliable Transistors - FETs, MOSFETs - Single by Nexperia USA Inc.. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, PSMN1R9-40YSDX meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6198 pF @ 20 V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 194W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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