PSMN3R7-100BSEJ
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 100V 120A D2PAK
$4.62
Available to order
Reference Price (USD)
1+
$4.62000
500+
$4.5738
1000+
$4.5276
1500+
$4.4814
2000+
$4.4352
2500+
$4.389
Exquisite packaging
Discount
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Nexperia USA Inc. presents PSMN3R7-100BSEJ, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, PSMN3R7-100BSEJ delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.95mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 246 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 16370 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 405W (Ta)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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