R6004KNX
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 4A TO220FM
$2.02
Available to order
Reference Price (USD)
1+
$1.59000
10+
$1.43100
100+
$1.15020
500+
$0.94500
1,000+
$0.78300
2,500+
$0.75600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose R6004KNX by Rohm Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with R6004KNX inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
Related Products
Diodes Incorporated
ZXMP2120G4TA
IXYS
IXTA26P20P-TRL
NXP USA Inc.
BUK9E1R6-30E,127
onsemi
FDMC7572S
onsemi
FDS8840NZ
Vishay Siliconix
IRFBC30ALPBF
STMicroelectronics
STF7NM80
UnitedSiC
UJ4SC075018B7S
Renesas Electronics America Inc
RQM2201DNSWS#P1
Diodes Incorporated