R6006JND3TL1
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 6A TO252
$2.54
Available to order
Reference Price (USD)
1+
$2.54000
500+
$2.5146
1000+
$2.4892
1500+
$2.4638
2000+
$2.4384
2500+
$2.413
Exquisite packaging
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Experience the power of R6006JND3TL1, a premium Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, R6006JND3TL1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
- Vgs(th) (Max) @ Id: 7V @ 800µA
- Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 86W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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