R6030ENX
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 30A TO220FM
$6.17
Available to order
Reference Price (USD)
1+
$4.88000
10+
$4.37900
100+
$3.58800
500+
$3.05440
1,000+
$2.57600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Rohm Semiconductor presents R6030ENX, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, R6030ENX delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
Related Products
onsemi
SMBF5460LT1
Renesas Electronics America Inc
NP82N055NUG-S18-AY
Diodes Incorporated
DMP6110SVTQ-13
Infineon Technologies
IPB140N08S404ATMA1
Toshiba Semiconductor and Storage
TK4A50D(STA4,Q,M)
Alpha & Omega Semiconductor Inc.
AON6260
Vishay Siliconix
SIHF12N60E-GE3
IXYS
IXFT150N17T2
Vishay Siliconix
SIRA54DP-T1-GE3
Vishay Siliconix