R6030ENZ4C13
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 30A TO247
$10.07
Available to order
Reference Price (USD)
1+
$10.07000
500+
$9.9693
1000+
$9.8686
1500+
$9.7679
2000+
$9.6672
2500+
$9.5665
Exquisite packaging
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Enhance your circuit performance with R6030ENZ4C13, a premium Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust R6030ENZ4C13 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 305W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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