R6042JNZ4C13
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 42A TO247G
$12.98
Available to order
Reference Price (USD)
1+
$12.98000
500+
$12.8502
1000+
$12.7204
1500+
$12.5906
2000+
$12.4608
2500+
$12.331
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
R6042JNZ4C13 by Rohm Semiconductor is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, R6042JNZ4C13 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 104mOhm @ 21A, 15V
- Vgs(th) (Max) @ Id: 7V @ 5.5mA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 495W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
Related Products
Toshiba Semiconductor and Storage
SSM6K518NU,LF
Nexperia USA Inc.
BUK7Y102-100B,115
Rohm Semiconductor
R6515ENXC7G
Vishay Siliconix
IRFR024PBF
Vishay Siliconix
SQJ457EP-T1_BE3
EPC
EPC2038
Infineon Technologies
BSC0908NS
Taiwan Semiconductor Corporation
TSM4436CS RLG
Diodes Incorporated
DMTH10H2M5STLW-13
STMicroelectronics