R6055VNZ4C13
Rohm Semiconductor
Rohm Semiconductor
600V 55A TO-247, PRESTOMOS WITH
$12.31
Available to order
Reference Price (USD)
1+
$12.31000
500+
$12.1869
1000+
$12.0638
1500+
$11.9407
2000+
$11.8176
2500+
$11.6945
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with R6055VNZ4C13 by Rohm Semiconductor, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, R6055VNZ4C13 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
- Rds On (Max) @ Id, Vgs: 71mOhm @ 16A, 15V
- Vgs(th) (Max) @ Id: 6.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 543W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
Related Products
NXP Semiconductors
PMN48XP,125
onsemi
NTF3055-100T1G
Nexperia USA Inc.
BUK9M28-80EX
STMicroelectronics
STF42N65M5
Panjit International Inc.
PJC7002H_R1_00001
Fairchild Semiconductor
FQU2N50BTU
Infineon Technologies
BSC097N06NSATMA1
Nexperia USA Inc.
BUK7M4R3-40HX
Sanken
2SK3003
Infineon Technologies