R6520ENZ4C13
Rohm Semiconductor
Rohm Semiconductor
650V 20A TO-247, LOW-NOISE POWER
$6.07
Available to order
Reference Price (USD)
1+
$6.07000
500+
$6.0093
1000+
$5.9486
1500+
$5.8879
2000+
$5.8272
2500+
$5.7665
Exquisite packaging
Discount
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Enhance your circuit performance with R6520ENZ4C13, a premium Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust R6520ENZ4C13 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 630µA
- Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 231W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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