R8003KND3TL1
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED SWITCHING NCH 800V 3A
$2.43
Available to order
Reference Price (USD)
1+
$2.43000
500+
$2.4057
1000+
$2.3814
1500+
$2.3571
2000+
$2.3328
2500+
$2.3085
Exquisite packaging
Discount
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Discover high-performance R8003KND3TL1 from Rohm Semiconductor, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, R8003KND3TL1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 45W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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